|Message: The deposit energy of G4LowEnergyPhotoElectric and G4LowEnergyCompton||Not Logged In (login)|
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Recently, I have used the two physical process in my Geant4 simulation program. I have simulated photons with 89.5keV to react with NaI as shown in Fig1 and I used the Geant4 9.4 version. I found that when the primary photon has occurred the low energy photoelectric effect, there will be a energy deposit(Edeposit, here I called it for short) in this step. And the total kinetic energy of the secondary particles (Esecondary) will less than the kinetic energy of the primary photon. The sum of the Edeposit and Esecondary will equal to the kinetic energy of the primary photon. I also found that the distribution of Edeposit is in Fig2. When I changed the incident energy of primary photon to 70keV, the distribution will be same. Maybe it is related with the bindingEnergy of isotope (Iodine). The same is for the Low energy compton process as shown in Fig3 and Fig4. So my questions are: 1, What does the energy deposit of that step do? Can the deposit energy make the crystal to fluoresce? 2, Why the distribution of Edeposit is like that? For the low energy compton process, why the deposit energy will more than 30keV?
Attachment: http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2016/12/12/17.16-2092-Fig1.png http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2016/12/12/17.16-59725-Fig2.png http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2016/12/12/17.16-97117-Fig3.png http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2016/12/12/17.16-66708-Fig4.png
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