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Question Optimisation for nanodosimetry in silicon 

Forum: Physics List
Date: 29 Jun, 2016
From: Pierre <Pierre>

Dear Geant4 users,

I am simulating the energy deposit induced by low energy muons (50 keV -> 2 MeV) in nanometrics volumes of silicon.

With the TestEm7 example, I am tying to optimize the parameters of my simulation with the following macro :

------------------------------------------------------------------------------------------------

/testem/det/setSizeX 100 nm

/testem/det/setSizeYZ 100 nm

/testem/phys/addPhysics emlowenergy

/run/setCut 1 nm

/cuts/setLowEdge 250 eV /run/initialize

/gun/particle mu- /gun/energy 1 MeV

/testem/stepMax 10 nm /run/beamOn 100000

------------------------------------------------------------------------------------------------

1) This simulation dedicated for nanodosimetry seems correct to you ?

2) If yes, how do you think I could verify the simulation's pertinence ?

3) If no, what parameters should I change ?

In paralel, I am using the TestEm8 with PAI model with the multiple scattering inactivated :

------------------------------------------------------------------------------------------------

/testem/setGasMat Silicon

/testem/setGasThick 100 nm

/testem/phys/addPhysics pai

/run/setCut 1 nm /cuts/setLowEdge 250 eV

/run/initialize /process/inactivate msc

/gun/particle mu- /gun/energy 1 MeV

/run/beamOn 100000

------------------------------------------------------------------------------------------------

4) Same questions as with the emlowenergy model, what do you think about this optimisation ?

In both simulations, the energy deposit is randomised on the step.

Thanks for the help,

Pierre

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1 Idea: Re: Optimisation for nanodosimetry in silicon   (Vladimir Ivanchenko - 23 Jul, 2016)
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