|Message: Re: Secondary electrons||Not Logged In (login)|
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If you mean the secondary electrons produced in photoelectric absorption and Compton scattering, then Geant4 does that for you. If you mean the electron-hole pairs that are created by the energy loss process, then, no, you have to do that. Geant4 tells you the energy deposited and its position for each step. In silicon, for example, this leads to about 1 e-h pair for every 3.66 eV of energy deposited. Then, of course, it's up to you to calculate the signal on the detector electrodes induced by the movement of these conduction electrons and holes, depending on the electrode configurations, detector thickness, e and h diffusion and mobilities in the electric field, etc.
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