|Message: Reliability of NIEL||Not Logged In (login)|
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I am interested in simulating displacement damage in silicon by protons/neutrons/electrons with energies below 500 MeV. I am using the Shielding_EMZ physics list and Geant4 10.04.02 [MT]. Here are my questions.
- Is the NIEL calculated by Geant4 a reliable value? I have seen old posts where the use of NIEL by Geant4 was not recommended, and other methods based on tabulated curves not included in Geant4 were instead preferred. Is this still the case?
- Can Geant4 correctly simulate ions displaced from their lattice positions by incoming particles? In this case, could those generate cascades like those simulated in packages like SRIM?
What I would like is NOT an estimation of, say, the number of vacancies created: instead I would like a reliable value of the energy deposited through non-ionizing processes, which I can then use in other calculations, such as equivalent fluence.
Thank you for your help.