|Message: alpha particle/ proton interaction with silicon||Not Logged In (login)|
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Dear Geant user,
I want to investigate the effect of alpha particle/proton strikes with silicon. In order to model the interaction of particles with silicon material, I use Geant4 toolkit. Using this tool, I tried to obtain the number of electrons which are generated in a silicon box for different particles with different energies. According to literature, for silicon materials, one electron-hole pair is produced for every 3.6 eV of energy lost by the particles. Therefore, I consider two different modes:
mode1: The energy cut value of Geant4 is set to 3.6eV to obtain generated electrons mode2: The default energy cut value is used (990eV), however, for each interaction the delta_energy of particle is divided to 3.6eV to obtain the number of electrons
The number of generated electrons are obtained for different particles with different energies for a silicon box with dimensions of (14nm*10nm*25nm).
- The number of generated electrons and the probability of particle interaction for mode1 are much higher than those of mode2. For example the number of generated electrons for 10,000 MC simulation for alpha particle with energy of 3MeV in both modes (mode1 and moed2) are attached.
Based on the results I have the following question:
- For which mode, the number of electrons that I get is reasonable? I have the results for both modes for different energy ranges. I can provide it if it is needed.
I can provide more details/results if you are interested. I appreciate if you can help me.
Attachment: http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2013/09/09/06.32-53454-alpha-3-mode1.txt http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2013/09/09/06.32-14250-alpha-3-mode2.txt