|Message: Hot to modify the resistivity or mobility of silicon||Not Logged In (login)|
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I need to model doped silicon to simulate the charge diffusion effect in the sensitive layers of a CCD and a CMOS detectors. This effect is controlled by the doping level of the silicon, this modifies the mobility and finally the diffusion coefficient, which controls the diffusion length of electrons.
I could create doped silicon as a new material in the following manner:
Sip2 = new G4Material("Sip2", density= 2.32*g/cm3, ncomponents=2); Sip2 ->AddElement(elSi, natoms=1); Sip2 ->AddElement(elB, natoms=0.2*10e-9);
... but this implementation doesn't seem to have any effect on the simulations.
I can see clearly a change if I modify the density of Si but this shouldn't happen unless extremely high doping levels are used (>10e19 at/cm-3). Not many parameters can be changed when a default material is created.
Is there a way of fooling Geant4 to create silicon but with higher resistivity? any ideas are are welcome, thanks.
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