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Dear Geant4 users;
I have the following problem with the Landau distribution.
I have a silicon layer of 50 um irradiated with an electron beam of 300 keV. I obtained the simulated energy deposition which resembles the Landau distribution. I plotted the theoretical Landau distribution and there is a large difference between Theory and simulation. I do not know why there is such difference between simulation and theoretical calculation (see figure 1)! How do we get the energy loss straggling in geant4? Does it come from Landau theory?
I highly appreciate your help.