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Idea Re: about inelastic models in Geant4 

Forum: Hadronic Processes
Re: Question about inelastic models in Geant4
Date: 02 Feb, 2009
From: Vladimir Ivanchenko <Vladimir Ivanchenko>

Hello,

You can try to use BinaryLightIoncascade for your case. The limitation as you mention really exists but is not strong.

VI

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Question Re: about inelastic models in Geant4  by <adnank@uludag.edu.tr>,   06 Feb, 2009
Re: Idea Re: about inelastic models in Geant4 (Vladimir Ivanchenko)
First i want to thank you for your answer.

As you said, i used BinaryLightIon model for inelastic interactions in simulation. if i use thicknes of 1.5mm silicon material , never interaction occur for Ar ions with energy 20 MeV/n. However, if i use thicknes of 5 cm silicon material,some fragmentations appear.

for 1.5mm Si thicknes and 20 MeV/n Ar ions

*********************************************************************************************************
* G4Track Information:   Particle = Ar40[0.0],   Track ID = 1,   Parent ID = 0
*********************************************************************************************************

Step#    X(mm)    Y(mm)    Z(mm) KinE(MeV)  dE(MeV) StepLeng TrackLeng  NextVolume ProcName
    0        0        0      900       800        0        0         0     expHall initStep
    1        0        0      690       800        0      210       210     silibox Transportation
    2        0        0      688       800        0      1.5       212     expHall Transportation
    3        0        0     -900       800        0 1.59e+03   1.8e+03  OutOfWorld Transportation

Could you give me some information about what can be the reason for that, please?

best regards,

Adnan.

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