|Message: Simulations with a CCD -||Not Logged In (login)|
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Dear Geant4 collaboration,
I am producing a simulation ( with other people) of our detector, a CCD. Our CCD in Geant4 is simply 3 volumes, Two dead layers (on the top and bottom of the CCD) and a sensitive part. The two dead layers are 1um thick each, and the sensitive part is 673um thick.
Our goal is to get for a Dark Matter experiment, to simulate our background coming from contamination. Our energy range is 50 eV to few MeV electron-equivalent .
We use the 10.2.2 version of G4.
To test our physics list we simulate low energies electrons ( 10 keV) going through a 2 µm silicon cube ( like the ones of the MicroElectronics paper : https://www.sciencedirect.com/science/article/pii/S0168583X12004314).
So we have 4 different configurations:
-Livermore with the Urban Model
-Livermore with the Goudsmit Saunderson Model
-Livermore with the Low Energy Wentzel Model
This 4 configuration for the projected range ( the sum of the length of the projection of the steps of an electron trajectory on its initial direction axis ( Z in our case) gives us different results, apart from Goudsmit and Urban models that gives almost same.
I attach one of my plots showing the difference between the MicroElectronics and Livermore with UrbanModel.
I am thus looking for some point of view of expert from the Geant4 collaboration. Which configuration should be the most accurate in our case, taking into account all the latest development ?
looking forward to hearing from you, Thanks!