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Forum: DNA/Very Low Energy
Date: Mar 14, 07:06
From: Joao Miguel Da Rocha <Joao Miguel Da Rocha>

Dear Geant4 collaboration,

I am producing a simulation ( with other people) of our detector, a CCD. Our CCD in Geant4 is simply 3 volumes, Two dead layers (on the top and bottom of the CCD) and a sensitive part. The two dead layers are 1um thick each, and the sensitive part is 673um thick.

Our goal is to get for a Dark Matter experiment, to simulate our background coming from contamination. Our energy range is 50 eV to few MeV electron-equivalent .

We use the 10.2.2 version of G4.

To test our physics list we simulate low energies electrons ( 10 keV) going through a 2 µm silicon cube ( like the ones of the MicroElectronics paper : https://www.sciencedirect.com/science/article/pii/S0168583X12004314).

So we have 4 different configurations:

-Livermore with the Urban Model

-Livermore with the Goudsmit Saunderson Model

-Livermore with the Low Energy Wentzel Model

-MicroElectronics

This 4 configuration for the projected range ( the sum of the length of the projection of the steps of an electron trajectory on its initial direction axis ( Z in our case) gives us different results, apart from Goudsmit and Urban models that gives almost same.

I attach one of my plots showing the difference between the MicroElectronics and Livermore with UrbanModel.

I am thus looking for some point of view of expert from the Geant4 collaboration. Which configuration should be the most accurate in our case, taking into account all the latest development ?

looking forward to hearing from you, Thanks!

Joćo

   Attachment:
      http://hypernews.slac.stanford.edu/HyperNews/geant4/get/AUX/2018/03/14/07.03-14729-ZLowMicrovsUrban10keV.pdf

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